| PART |
Description |
Maker |
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SA1705 |
Bipolar Transistor Adoption of FBET process
|
ON Semiconductor
|
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| VTB5041 VTB5040 |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Perkin Elmer Optoelectronics
|
| VPH05 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
High Defintion Television, Projector Video Output Amplifier
|
Sanyo Semicon Device
|
| RN4601 |
Transistor PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
Toshiba Semiconductor
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
